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all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! PTMA080152M confidential, limited internal distribution data sheet 1 of 11 rev. 04, 2010-04-16 two-tone drive-up v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma ? = 920, 940, 960 mhz 0 5 10 15 20 25 30 35 40 45 50 27 29 31 33 35 37 39 41 43 average output power ( dbm ) power added efficiency (%) -60 -55 -50 -45 -40 -35 -30 -25 -20 -15 -10 imd3 (dbc) efficiency imd3 920 mhz 940 mhz 960 mhz description the PTMA080152M is a wideband, on-chip matched, 15-watt, 2-stage ldmo s integrated power amplifier intended for wideband driver applications in the 700 to 1000 mhz frequency range. it is offered in a 20-lead thermally-enhanced overmolded package for cool and reliable operation. PTMA080152M package pg-dso-20-63 wideband rf ldmos integrated power amplifier 15 w, 700 ? 1000 mhz features ? broadband on-chip matching, 50-ohm input and ~10-ohm output ? typical gsm/edge performance at 28 v, 920 to 960 mhz - gain = 30 db - efficiency = 34% at 8 w output power - evm @ 8 w = 1.5% - acpr @ 400 khz = ?61 dbc - acpr @ 600 khz = ?75 dbc ? typical cw performance, 940 mhz, 28 v - output power at p?1db = 20 w - efficiency = 49% ? integrated esd protection. meets hbm class 1b (minimum), per jesd22-a114f ? excellent thermal stability, low hci drift ? capable of handling 10:1 vswr @ 28 v, 20 w (cw) output power ? rohs-compliant package *see infineon distributor for future availability. rf characteristics gsm/edge measurements (not subject to production test?verified by design/characterization in infineon test fixture) v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 920 to 960 mhz, p out = 8 w avg. characteristic symbol min typ max unit input return loss irl ? ?15 ? db gain g ps ?30 ? db power added efficiency ?34 ? % error vector magnitude evm (rms) ? 1.5 ? % table continued next page
PTMA080152M confidential, limited internal distribution data sheet 2 of 11 rev. 04, 2010-04-16 rf characteristics (cont.) gsm/edge measurements (cont.) ( not subject to production test?verified by design/characterization in infineon test fixture) v ds = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 920 to 960 mhz, p out = 8 w avg. characteristic symbol min typ max unit modulation spectrum 400 khz offset acpr1 ? ?61 ? dbc 600 khz offset acpr2 ? ?75 ? dbc spurs load 3:1 ? ? ? ?60 dbc gain flatness g ? 0.2 ? db two-tone measurements (tested in infineon test fixture) v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma, p out = 8 w pep, ? = 940 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 29 30 ? db power added efficiency 33 35 ? % intermodulation distortion imd3 ? ?34 ?31 dbc dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance stage 1 v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.6 ? stage 2 v gs = 10 v, v ds = 0.1 v r ds(on) ? 3.48 ? operating gate voltage v ds = 28 v, i dq1 = 70 ma, v gs 2.0 2.5 3.0 v v ds = 28 v, i dq2 = 90 ma v gs 2.0 ? 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a
PTMA080152M confidential, limited internal distribution data sheet 3 of 11 rev. 04, 2010-04-16 maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c input power p in 15 w total device dissipation p d 91 w above 25c derate by 0.52 w/c storage temperature range t stg ?40 to +150 c overall thermal resistance (t case = 70c) stage 1 r jc 8.5 c/w p out = 15 w, i dq1 = 70 ma, i dq2 = 90 ma stage 2 r j0c 2.5 c/w moisture sensitivity level level test standard package temperature unit 3 ipc/jedec j-std-020 260 c ordering information type and version package outline package description shipping PTMA080152M v1 pg-dso-20-63 molded plastic tape & reel *see infineon distributor for future availability.
PTMA080152M confidential, limited internal distribution data sheet 4 of 11 rev. 04, 2010-04-16 broadband performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma fixture tuned for 920 - 960 mhz 0 4 8 12 16 20 24 28 32 750 800 850 900 950 1000 1050 1100 1150 frequency (mhz) gain (db) -32 -28 -24 -20 -16 -12 -8 -4 0 return loss (db) gain return loss edge - evm v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, ? = 942.6 mhz 20 25 30 35 40 30 32 34 36 38 40 42 output power (dbm) gain (db) gain 90 c ?25 c 25 c edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series show ? = 942.6 mhz, at selected temperatures cw performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma ? = 920 , 940, 960 mhz 10 12 14 16 18 20 22 24 26 28 30 32 29 31 33 35 37 39 41 43 45 output power (dbm) gain (db) 10 15 20 25 30 35 40 45 50 55 60 65 power added efficiency(%) gain 920 mhz 940 mhz 960 mhz efficiency cw performance at selected drain voltages v dd1 = 28 v, v dd2 =24 v, 28 v and 32 v, i dq1 = 70 ma ? = 940 mhz 19 20 21 22 23 24 25 26 27 28 29 30 31 32 30 32 34 36 38 40 42 44 46 output power (dbm) gain (db) gain 28 v 24 v 32 v typical performance (data taken in infineon production test fixture)
PTMA080152M confidential, limited internal distribution data sheet 5 of 11 rev. 04, 2010-04-16 edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series are at selected frequencies 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) power added efficiency (%) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 modulation spectrum (dbc) efficienc y 400 khz 600 khz 925.2 mhz 942.6 mhz 959.8 mhz edge modulation spectrum performance v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series show ? = 942.6 mhz, at selected temperatures 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) power added efficiency (%) -85 -80 -75 -70 -65 -60 -55 -50 -45 -40 -35 modulation spectrum (dbc) efficienc y 400 khz 600 khz 90 c ?25 c 25 c edge - evm v dd = 28 v, i dq1 = 70 m a, i dq2 = 120 m a, series are at selected frequencies 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) power added efficiency (%) 0 1 2 3 4 5 6 7 8 9 10 error vector magnitude (%) evm efficiency 925.2 mhz 942.6 mhz 959.8 mhz edge - evm v dd = 28 v, i dq1 = 70 ma, i dq2 = 120 ma, series show ? = 942.6 mhz, at selected temperatures 0 5 10 15 20 25 30 35 40 45 50 30 31 32 33 34 35 36 37 38 39 40 41 42 output power (dbm) power added efficiency (%) 0 1 2 3 4 5 6 7 8 9 10 error vector magnitude (%) efficiency evm 90 c ?25 c 25 c typical performance (cont.)
PTMA080152M confidential, limited internal distribution data sheet 6 of 11 rev. 04, 2010-04-16 z load d s in 0. 1 0. 3 0. 2 0. 4 0 . 1 0 . 1 - w a v e l e n g t h s t o w a r d g e n e r a n g t h s t o w a r d l o a d - 0 . 0 700 mhz 1000 mhz z load z 0 = 50 frequency z load mhz r jx 700 10.6 ?4.3 720 10.1 ?3.7 740 9.8 ?3.1 760 9.5 ?2.4 780 9.2 ?1.8 800 9.0 ?1.2 820 8.8 ?0.5 840 8.7 0.1 860 8.6 0.8 880 8.5 1.4 900 8.5 2.1 920 8.5 2.8 940 8.5 3.5 960 8.6 4.3 980 8.7 5.0 1000 8.8 5.8 gate ? source voltage vs. temperature v dd = 28 v, i dq1 = 70 ma, i dq2 = 90 ma 0.85 0.90 0.95 1.00 1.05 1.10 1.15 -30 -10 10 30 50 70 90 temperature (c) normalized gate ? source voltage (threshold), v slope = ?1.3 mv/c vgs1 vgs2 typical performance (cont.) broadband circuit impedance
PTMA080152M confidential, limited internal distribution data sheet 7 of 11 rev. 04, 2010-04-16 reference circuit reference circuit schematic for ? = 940 mhz circuit assembly information dut PTMA080152M ldmos ic pcb 0.76 mm [.030"] thick, r = 4.5 rogers ro4350 2 oz. copper microstrip electrical characteristics at 940 mhz 1 l x w (mm) l x w (in.) ? 1 0.017 , 50.0 3.00 x 1.70 0.118 x 0.067 ? 2 0.143 , 50.0 24.71 x 1.70 0.973 x 0.067 ? 3 0.024 , 15.0 4.09 x 8.64 0.161 x 0.340 ? 4 0.144 , 59.0 24.77 x 1.30 0.975 x 0.051 ? 5 0.024 , 27.0 4.22 x 4.11 0.166 x 0.162 ? 6 0.044 , 34.0 7.57 x 3.02 0.298 x 0.119 ? 7 0.044 , 44.0 8.33 x 2.11 0.328 x 0.083 ? 8 0.0702 , 44.0 12.12 x 2.11 0.477 x 0.083 ? 9 0.030 , 44.0 5.18 x 2.11 0.204 x 0.083 1 electrical characteristics are rounded. c18 10 f c16 0.1 f c15 47 pf c17 1 f c19 100 f 50v v d 2 ? 3 ? 5 ? 4 c22 33pf c20 2.2pf ? 6 ? 7 c21 5.6pf ? 8 ? 9 j2 PTMA080152M 516 10 9 7 8 6 11 12 13 14 15 dut 1 3 4 2 17 18 19 20 c14 47pf c10 47pf c12 1 f c8 1 f j1 c7 10 f c11 10 f c9 0.1 f c13 0.1 f ? 1 v d1 c1 100 f 50v c2 10 f c3 1 f c6 1pf ? 2 c4 0.1 f c5 47pf r1 0 o q1 v g1 r3 r2 0 o q2 r4 g2 v
PTMA080152M confidential, limited internal distribution data sheet 8 of 11 rev. 04, 2010-04-16 rf_out a080152 m_cd_2-10- 09 rf_in v d1 v d2 v g1 v g2 c19 c14 c18 c17 c12 c13 c16 c15 c1 c2 c3 c4 c5 c6 c7 c8 c9 c10 c11 c20 c21 c22 r3 r4 q1 r1 r2 q2 reference circuit (cont.) reference circuit assembly diagram (not to scale)* component description suggested manufacturer p/n or comment c3, c8, c12, c17 ceramic capacitor, 1 f digi-key 445-1411-2-nd c4, c9, c13, c16 capacitor, 0.1 f digi-key pcc104bct-nd c2, c7, c11, c18 tantalum capacitor, 10 f, 50 v digi-key p5571-nd c1, c19 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c6 ceramic capacitor, 1.0 pf atc 600s 1ro ct c20 ceramic capacitor, 2.2 pf atc 600s 2r2 ct c21 ceramic capacitor, 5.6 pf atc 600s 5r6 ct c22 ceramic capacitor, 33 pf atc 600s 330 jt c5, c10, c14, c15 ceramic capacitor, 47 pf atc 600s 470 jt q1, q2 transistor infineon technologies bcp56 r1, r2 chip resistor, 0 ohms digi-key pxxect-nd r3, r4 variable resistor, 2k ohms digi-key 3224w-202etr-nd *gerber files for this circuit available on request
PTMA080152M confidential, limited internal distribution data sheet 9 of 11 rev. 04, 2010-04-16 1 2 3 4 5 6 7 8 9 10 20 19 18 17 16 15 14 13 12 11 a080152 m_pd_ 10- 31- 08 v dd 1 v dd 1 rf in rf in v g 1 v g 2 nc nc v dd 2, rf out v dd 2, rf out v dd 2, rf out v dd 2, rf out v dd 2, rf out v dd 2, rf out nc nc nc nc nc nc pinout diagram source: plated copper heatslug on backside of package find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
PTMA080152M confidential, limited internal distribution data sheet 10 of 11 rev. 04, 2010-04-16 package outline specifications package pg-dso-20-63 refer to application note "recommendations for printed circuit board assembly of infineon dso and ssop packages" for additional information. 2x 2.90 [0.114] max (2 pls) 13.00 [0.512] max 1 10 11 20 6. index pin 1 6. 14.200.30 11.00 [0.433] 9 x 1.27 = 11.43 9 x .050 = .450 1.10 [0.043] max (2 pls) 2.95 [0.116] 6.00 [0.236] top view bottom view [0.5590.012] 0.40+0.13 [0.015+0.005] 0.25mm c a b 15.900.10 [0.6260.004] 1.27 [0.050] 141 (2 pls) top/bottom all sides 11.000.10 [0.4330.004] 5. 3.50 [0.137] max see detail a 4. side view end view m ss 0.950.15 [0.0370.006] 0.35 [0.014] gauge plane 0.15 [0.006] ref 0+0.1 [0+0.004] standoff 1.60 [0.063] ref 0.25 +0.07 ?0.02 [0.010 ] +0.003 ?0.001 detail a pg-dso-20-63_po_02-19-2010 diagram notes?unless otherwise specified: 1. interpret dimensions and tolerances per asme y14.5m-1994. 2. package dimensions: 11.0 mm by 15.9 mm by 3.35 mm. 3. jedec drawing number: mo-166. 4. does not include plastic or metal protrusion of 0.15 mm max per side. 5. does not include dambar protrusion; maximum allowable dambar protrusion shall be 0.08 mm. 6. bottom metallization. 7. sn plating (matte) : 5 ? 15 micron [196.85 ? 590.55 microinch].
data sheet 11 of 11 rev. 04, 2010-04-16 PTMA080152M v1 confidential, limited internal distribution revision history: 2010-04-16 data sheet previous version: 2009-08-31, data sheet page subjects (major changes since last revision) 3 added moisture sensitivity level table 10 updated package outline notes edition 2010-04-16 published by infineon technologies ag 81726 munich, germany ? 2009 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international

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